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Physical modeling of degenerately doped compound semiconductors for high-performance HBT design q
 

Summary: Physical modeling of degenerately doped compound semiconductors
for high-performance HBT design q
James C. Li a,b,*, Marko Sokolich b
, Tahir Hussain b
, Peter M. Asbeck a
a
High Speed Devices Group, Department of Electrical and Computer Engineering,
University of California San Diego, La Jolla, CA 92093, USA
b
Microelectronics Laboratory, HRL Laboratories, L.L.C., Malibu, CA 90265, USA
Received 11 March 2006; received in revised form 24 April 2006; accepted 29 April 2006
Available online 21 June 2006
The review of this paper was arranged by Prof. A. Zaslavsky
Abstract
Numerous research groups are currently developing high-performance InP HBTs with fT and fMAX greater than 400 GHz. However,
the heavily degenerate doping concentrations used in these devices present new challenges to numerical device simulation. This work
focuses on three physical phenomena in InP and In0.53Ga0.47As and their implementation in physics based device simulators. First,
the use of the parabolic band approximation yields a constant DOS effective mass, but this results in an erroneously deep Fermi-level
under heavily degenerate donor concentrations. An empirical model is presented and shown to have good agreement with previously
published simulations and experimental data. Second, bandgap narrowing parameters and a table based model are used as a more gen-

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering