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INSTITUTE OF PHYSICS PUBLISHING MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING Modelling Simul. Mater. Sci. Eng. 12 (2004) 929943 PII: S0965-0393(04)80701-0
 

Summary: INSTITUTE OF PHYSICS PUBLISHING MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
Modelling Simul. Mater. Sci. Eng. 12 (2004) 929943 PII: S0965-0393(04)80701-0
A three-dimensional cellular automaton model of
dislocation motion in FCC crystals
Qizhen Li and Peter M Anderson
Department of Materials Science and Engineering, Ohio State University, 2041 College Road,
Columbus, OH 43210-1179, USA
E-mail: li.450@osu.edu and anderson.1@osu.edu
Received 11 January 2004
Published 1 July 2004
Online at stacks.iop.org/MSMSE/12/929
doi:10.1088/0965-0393/12/5/011
Abstract
A three-dimensional dislocation cellular automaton model is developed to
study the evolution of dislocation configurations in FCC single crystals.
Crystallographic {111} slip planes with three-fold symmetry are discretized
into equilateral triangular patches with sides along 110 directions. These
patches slip provided there is a sufficient driving force associated with reduction
in system energy. Perfect 110 /{111} dislocations are considered. The
resulting variables are the triangular patch size and dislocation core cut-off,

  

Source: Anderson, Peter M. - Department of Materials Science and Engineering, Ohio State University

 

Collections: Materials Science