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Journal of Applied Physics 70, 5323 (15 November 1991). Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications
 

Summary: Journal of Applied Physics 70, 5323 (15 November 1991).
Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications
for Point-Defect Mechanisms
Guo-Quan Lua), Eric Nygrenb), and Michael J. Aziz, Division of Applied Sciences,
Harvard University, Cambridge MA 02138
The effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG)
rate, v, of intrinsic Ge (100) and undoped and doped Si (100) into their respective
self-implanted amorphous phases are reported. Samples were annealed in a
high-temperature, high-pressure diamond anvil cell. Cryogenically-loaded fluid Ar,
used as the pressure transmission medium, ensured a clean and hydrostatic
environment. v was determined by in situ time-resolved visible (for Si) or infrared
(for Ge) interferometry. v increased exponentially with pressure, characterized by a
negative activation volume of 0.46 in Ge, where is the atomic volume, and
0.28 in Si. The activation volume in Si is independent of both dopant
concentration and dopant type. Structural relaxation of the amorphous phases has no
significant effect on v. These and other results are inconsistent with all bulk
point-defect mechanisms, but consistent with all interface point-defect mechanisms,
proposed to date. A kinetic analysis of the Spaepen-Turnbull interfacial dangling bond
mechanism is presented, assuming thermal generation of dangling bonds at ledges
along the interface, independent migration of the dangling bonds along the ledges to

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science