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Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates
 

Summary: Nanophotonic devices on thin buried oxide
Silicon-On-Insulator substrates
Suresh Sridaran* and Sunil A. Bhave
OxideMEMS Lab, School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850
*ss625@cornell.edu
Abstract: We demonstrate a silicon photonic platform using thin buried
oxide silicon-on-insulator (SOI) substrates using localized substrate
removal. We show high confinement silicon strip waveguides, micro-ring
resonators and nanotapers using this technology. Propagation losses for the
waveguides using the cutback method are 3.88 dB/cm for the quasi-TE
mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a
loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q
of 148,000 for the quasi-TE mode have been obtained. This process will
enable the integration of photonic structures with thin buried oxide SOI
based electronics.
2010 Optical Society of America
OCIS codes: (230.3120) Integrated optics devices; (230.7370) Waveguides; (250.5300)
Photonic integrated circuits
References and Links
1. D. A. B. Miller, "Rationale and challenges for optical interconnects to electronic chips," Proc. IEEE 88(6), 728

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering