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Single-quantum-well grating-gated terahertz plasmon detectors E. A. Shaner,a

Summary: Single-quantum-well grating-gated terahertz plasmon detectors
E. A. Shaner,a
Mark Lee, M. C. Wanke, A. D. Grine, and J. L. Reno
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185
S. J. Allen
Center for Terahertz Science and Technology, University of California at Santa Barbara,
Santa Barbara, California 93106
Received 29 June 2005; accepted 12 September 2005; published online 2 November 2005
A grating-gated field-effect transistor fabricated from a single-quantum well in a high-mobility
GaAs­AlGaAs heterostructure is shown to function as a continuously electrically tunable
photodetector of terahertz radiation via excitation of resonant plasmon modes in the well. Different
harmonics of the plasmon wave vector are mapped, showing different branches of the dispersion
relation. As a function of temperature, the resonant response magnitude peaks at around 30 K. Both
photovoltaic and photoconductive responses have been observed under different incident power and
bias conditions. © 2005 American Institute of Physics. DOI: 10.1063/1.2128057
The terahertz THz frequency dynamics of high-
mobility field-effect transistors FETs are largely controlled
by collective charge density oscillations, or plasmons, of the
two-dimensional electron gas 2DEG in the FET channel.
This has led to a great deal of recent interest in exploiting


Source: Allen, S. James - Department of Physics, University of California at Santa Barbara


Collections: Physics; Materials Science