Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network

  Advanced Search  

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4 ,E. Tschumak1

Summary: Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4
A. Zado*1
,E. Tschumak1
, J.W. Gerlach² K. Lischka1
and D.J. As1
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100
D-33098 Paderborn, Germany
Leibniz-Institut für Oberflächenmodifizierung (IOM), D-04318 Leipzig, Germany
Abstract. We report on carbon doping of cubic GaN by CBr4 using plasma-assisted molecular beam epitaxy on 3C-SiC
(001) substrates. The samples consist of a 70 nm thick GaN buffer followed by a 550 nm thick GaN:C layer. Carbon
doping is realized with a home-made carbon tetrabromide sublimation source. The CBr4 beam equivalent pressure was
established by a needle valve and was varied between 2x10-9
mbar and 6x10-6
mbar. The growth was controlled by in-situ
reflection high energy electron diffraction. The incorporated carbon concentration is obtained from secondary ion mass
spectroscopy. Capacitance voltage characteristics were measured using metal-insulator-semiconductor structures.
Capacitance voltage measurements on nominally undoped cubic GaN showed n-type conductivity with


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics