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Rigorous Analysis of Traveling Wave Photodetectors under High-Power Illumination
 

Summary: Rigorous Analysis of Traveling Wave Photodetectors under High-
Power Illumination
Damir Pasalic, Student Member IEEE, Rüdiger Vahldieck, Fellow IEEE, Andreas Aste*
Swiss Federal Institute of Technology Zurich, Laboratory for Electromagnetic Fields and Microwave
Electronics, Gloriastr. 35, CH-8092 Zurich, Switzerland
*University of Basel, Institute of Physics, Klingelbergstr. 82, CH-4056, Switzerland
Abstract -- An efficient hybrid method for the rigorous
analysis of traveling-wave photodetectors (TWPDs) is
presented. The method consists of a combination of the 2D
drift-diffusion based semiconductor simulation in
conjunction with a full-wave EM analysis of the overall
structure. While the 2D simulation determines the
conductivity profile of the semiconductor layers under
illuminations of different optical power levels, the 3D
simulation characterizes the corresponding RF performance
of the TWPD. Comparison with available experimental data
has shown excellent agreement.
I. INTRODUCTION
High-power traveling-wave photodetectors (TWPDs)
are key components in the design of modern broadband

  

Source: Aste, Andreas - Institut für Physik, Universität Basel

 

Collections: Physics