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Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1-x synthesized by ion implantation and pulsed-laser
 

Summary: Composition dependence of Schottky barrier heights and bandgap
energies of GaNxAs1-x synthesized by ion implantation and pulsed-laser
melting
Taeseok Kim,1,a
Kirstin Alberi,2
Oscar D. Dubon,3,4
Michael J. Aziz,1
and
Venkatesh Narayanamurti1
1
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
2
National Renewable Energy Laboratory, Golden, Colorado 80401, USA
3
Department of Materials Science and Engineering, University of California, Berkeley, California 94720,
USA
4
Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Received 30 September 2008; accepted 4 November 2008; published online 11 December 2008
We present a systematic investigation on the band structure of the GaNxAs1-x alloys synthesized

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University
Narayanamurti, Venky - School of Engineering and Applied Sciences, Harvard University

 

Collections: Engineering; Materials Science; Physics