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Mechanism of Selective Growth of Carbon Nanotubes on SiO2/Si Patterns

Summary: Mechanism of Selective Growth of
Carbon Nanotubes on SiO2/Si Patterns
Yung Joon Jung,* Bingqing Wei, Robert Vajtai, and Pulickel M. Ajayan
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute,
Troy, New York 12180-3590
Yoshikazu Homma, Kuniyil Prabhakaran, and Toshio Ogino
NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-0198, Japan
Received February 10, 2003; Revised Manuscript Received February 28, 2003
During the chemical vapor deposition of multiwalled carbon nanotubes using the vapor phase delivery of a metal-organic (ferrocene) catalyst
precursor, a strong selectivity for growth on patterned SiO2/Si substrates has been observed. A mechanism for this selective growth is
described here. Delivered metal particles (Fe) on Si and SiO2 regions were investigated using several high-resolution characterization techniques.
Active iron catalyst ( iron) particles were formed on the silicon oxide surface resulting in the formation of highly aligned nanotubes on this
substrate. However, in the Si regions, stable FeSi2 and Fe2SiO4 particles were formed due to chemical reactions between silicon surface and
Fe particles at high temperature leading to an inhibition of nanotube growth in the Si regions.
Carbon nanotubes have attracted considerable interest due
to their unique one-dimensional structure and superior
electrical and mechanical properties.1-4
Particularly, carbon
nanotubes have fascinating electrical properties such as high


Source: Ajayan, Pulickel M. - Department of Mechanical Engineering and Materials Science, Rice University


Collections: Materials Science