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Reaction kinetics of CuInSe2 thin films grown from bilayer InSe/CuSe S. Kim, W. K. Kim, R. M. Kaczynski, R. D. Acher, S. Yoon, T. J. Anderson,a
 

Summary: Reaction kinetics of CuInSe2 thin films grown from bilayer InSe/CuSe
precursors
S. Kim, W. K. Kim, R. M. Kaczynski, R. D. Acher, S. Yoon, T. J. Anderson,a
and
O. D. Crisallea
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
E. A. Payzant
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
S. S. Li
Department of Electrical and Computer Engineering, University of Florida Gainesville Florida 32611
Received 29 May 2003; accepted 20 December 2004; published 1 March 2005
The reaction kinetics for the formation of CuInSe2 thin films from a stacked bilayer precursor
consisting of InSe and CuSe was studied by means of in situ high-temperature x-ray diffraction. In
particular, the isothermal phase evolution of the glass/InSe/CuSe precursor was observed at different
temperatures. The pathway produces a CuInSe2 diffusion barrier layer that also functions as a
nucleation barrier. Hence, amorphous and crystalline phases simultaneously grow during isothermal
processing. The shape of the time-resolved fractional reaction curve exhibits a deceleratory
behavior, consistent with the presence of a diffusion-controlled reaction mechanism. Analyses based
on Avrami and parabolic-rate laws were conducted. The Avrami exponent for each isothermal
reaction is in the range 0.50.8, which indicates that the growth reaction is dominantly

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science