Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
HIGH-Q INTEGRATED INDUCTORS ON TRENCHED SILICON ISLANDS Mina Raieszadeh, Pejman Monajemi, Sang-Woong Yoon, Joy Laskar, and Farrokh Ayazi
 

Summary: HIGH-Q INTEGRATED INDUCTORS ON TRENCHED SILICON ISLANDS
Mina Raieszadeh, Pejman Monajemi, Sang-Woong Yoon, Joy Laskar, and Farrokh Ayazi
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, USA
ABSTRACT
A new implementation of high quality factor (Q) copper
(Cu) inductors on CMOS-grade silicon substrates using a
fully CMOS-compatible process is presented. A low-
temperature fabrication sequence is employed to reduce the
loss of Si wafers at RF frequencies using micromachining
technique. This method does not require air suspension of
the inductors, resulting in mechanically-robust structures
that are compatible with any packaging technology. A 1nH
inductor fabricated on this low-loss micromachined Si
substrate exhibits a high peak Q of 51 at 1.0GHz (40 at
2.4GHz) with a self-resonant frequency larger than 10GHz.
1. INTRODUCTION
Integrated high-Q inductors can improve the performance
and integration-level of RFIC's while reducing their power
consumption and cost. On-chip inductors in commercially
available CMOS processes exhibit poor Q's (<15) due to

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering