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Room temperature ferromagnetism in cubic GaN epilayers implanted V. A. Chitta,a)
 

Summary: Room temperature ferromagnetism in cubic GaN epilayers implanted
with Mn+
ions
V. A. Chitta,a)
J. A. H. Coaquira, J. R. L. Fernandez, C. A. Duarte, and J. R. Leite
Instituto de Física da Universidade de São Paulo, Caixa Postal 66318, 05315-970 São Paulo, SP, Brazil
D. Schikora, D. J. As, and K. Lischka
Universität Paderborn, FB6 Physic, D-33095 Paderborn, Germany
E. Abramof
Instituto Nacional de Pesquisas Espaciais (INPE-LAS), Caixa Postal 515,
12901-970 São José dos Campos, SP, Brazil
(Received 8 June 2004; accepted 6 September 2004)
Mn ions were implanted in p-type cubic GaN at doses from 0.6 to 2.4 1016
cm-2
at 200 keV
energy. A 200-nm-thick epitaxial layer, grown by molecular beam epitaxy on GaAs(001) substrate,
is used for the Mn implantation. The Mn implanted samples were subjected to an annealing at
950 °C for 1­5 min. The structural quality of the samples was investigated by high resolution x-ray
diffraction and Raman spectroscopy. The annealing procedure leads to a significant increasing of the
crystalline quality of the samples. Hysteresis loops were observed for all cubic GaMnN annealed

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics