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Room temperature ferromagnetism in cubic GaN epilayers implanted V. A. Chitta,a)

Summary: Room temperature ferromagnetism in cubic GaN epilayers implanted
with Mn+
V. A. Chitta,a)
J. A. H. Coaquira, J. R. L. Fernandez, C. A. Duarte, and J. R. Leite
Instituto de Física da Universidade de São Paulo, Caixa Postal 66318, 05315-970 São Paulo, SP, Brazil
D. Schikora, D. J. As, and K. Lischka
Universität Paderborn, FB6 Physic, D-33095 Paderborn, Germany
E. Abramof
Instituto Nacional de Pesquisas Espaciais (INPE-LAS), Caixa Postal 515,
12901-970 São José dos Campos, SP, Brazil
(Received 8 June 2004; accepted 6 September 2004)
Mn ions were implanted in p-type cubic GaN at doses from 0.6 to 2.4 1016
at 200 keV
energy. A 200-nm-thick epitaxial layer, grown by molecular beam epitaxy on GaAs(001) substrate,
is used for the Mn implantation. The Mn implanted samples were subjected to an annealing at
950 °C for 1­5 min. The structural quality of the samples was investigated by high resolution x-ray
diffraction and Raman spectroscopy. The annealing procedure leads to a significant increasing of the
crystalline quality of the samples. Hysteresis loops were observed for all cubic GaMnN annealed


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics