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Comparative Study of 3C-GaN Grown on Semi-insulating 3C-SiC/Si(100) Elena Tschumak1,a
 

Summary: Comparative Study of 3C-GaN Grown on Semi-insulating 3C-SiC/Si(100)
Substrates
Elena Tschumak1,a
, Katja Tonisch2,b
, Jörg Pezoldt2,c
and Donat J. As1,d
1
Universität Paderborn, Fakultät für Naturwissenschaften, Department Physik,
Warburger Straße 100, 33098 Paderborn, Germany
2
FG Nanotechnologie, Institut für Mikro- und Nanotechnologien, TU Ilmenau, Postfach 100565,
98684 Ilmenau, Germany
a
elena.tschumak@uni-paderborn.de, b
katja.tonisch@tu-ilmenau.de, c
joerg.pezoldt@tu-ilmenau.de,
d
d.as@uni-paderborn.de
Keywords: heteroepitaxy, 3C-GaN, HRXRD, silicon
Abstract. Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics