Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Time-resolved temperature measurements during rapid solidification of Si=As alloys induced by pulsed-laser melting
 

Summary: Time-resolved temperature measurements during rapid solidification
of Si=As alloys induced by pulsed-laser melting
J. A. Kittl, R. Reitano,a) and M. J. Aziz
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
D. P. Brunco and M. 0. Thompson
Department of Materials Science, Cornell University, Ithaca, New York 14853
(Received 23 October 1992; accepted for publication 22 December 1992)
The solidification of Si-As alloys induced by pulsed-laser melting was studied at regrowth
velocities where the partition coefficient is close to unity. The congruent melting temperatures
To of Si-As alloys were determined using a temperature measurement technique developed for
this work, and was confirmed with To measurements using three other methods. The
time-resolved temperature measurement uses a thin-film platinum thermistor, below and
electrically isolated from the Si-As alloy layer, to directly measure the temperature during
solidification. The other techniques compared the results of heat flow simulations with the
fluence dependence of the peak melt depth obtained by transient conductance, the fluence
dependence of the melt duration determined from time-resolved reflectivity and transient
conductance, and the fluence threshold for the initiation of melting. This combination of
measurements in conjunction with Rutherford backscattering spectrometry permitted the
determination of the solid-liquid interface temperature, velocity and partition coefficient, the
latent heat of fusion and T, for Si-4.5 at. % As and Si-9 at. % As alloys. The values of To

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science