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Summary: Thesis Title: A STUDY INTO THE APPLICABILITY OF
P+
N+
(UNIVERSAL CONTACT) TO POWER
SEMICONDUCTOR DIODES AND
TRANSISTORS FOR FASTER REVERSE
RECOVERY
Name: RAGHUBIR SINGH ANAND
Roll Number: 9410474
Thesis Supervisor Dr. J. Narain
Dr. B. Mazhari
Degree for which submitted Ph.D.
SYNOPSIS
PN junction diodes and Bipolar junction transistors (BJTs) are used in a wide
variety of switching applications, such as, TV deflection circuits, motor drives, switched
mode power supplies and others. In most of these applications, the diodes and transistors
are used for operation at frequencies less than 100 kHz. The limiting mechanism for the
speed of operation is the presence of stored minority charge during the ON state and the
reverse recovery time required for removing these stored charges. The uni-polar devices
like Schottky and MOS are inherently fast because of absence of minority charge storage
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