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Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
 

Summary: Measurement of drift mobility in AlGaN/GaN heterostructure
field-effect transistor
X. Z. Dang, P. M. Asbeck, and E. T. Yua)
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla,
California 92093-0407
G. J. Sullivan, M. Y. Chen, and B. T. McDermott
Rockwell Science Center, Thousand Oaks, California 91358
K. S. Boutros and J. M. Redwing
Epitronics/ATMI, Phoenix, Arizona 85027-2726
Received 27 January 1999; accepted for publication 25 April 1999
Low-field mobilities for electrons in the channel of an Al0.15Ga0.85N/GaN heterostructure field-effect
transistor are derived from direct current transistor characteristics. The dependencies of mobility on
gate bias, sheet carrier concentration, and temperature are obtained. For negative gate bias voltages,
mobility is found to increase monotonically with increasing sheet carrier concentration, which we
interpret as a consequence of increased screening of carrier scattering. For positive gate bias
voltages, mobility is found to decrease with increasing gate bias due to the onset of parallel
conduction in the AlGaN barrier layer. The mobility varies approximately as T with
1.61.8 for temperature ranging from 200 to 400 K, indicating that phonon scattering is dominant
in the two-dimensional electron gas in this temperature range. 1999 American Institute of
Physics. S0003-6951 99 01225-5

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering