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Summary: ecent developments in molecular beam epitaxial growth of group IV semiconductors
devices has led to a renewed interest in SiGe heterostructures. This effort is motivated
Rmainly by the goal of integrating optical active elements in the present Silicon
technology. If demonstrated, these devices could act as interfaces between microelectronic
circuits and optical fibers or could be used to produce low-cost infrared laser materials. With
this research field our theoretical investigation focuses on the physics of interbands and inter-
subbands transitions occurring in quantum wells based on these materials.
Fig. 1
Valence and conduction
band dispersion around the
Gpoint of a double Si/Ge
QW system grown on cubic
Si. Ge wells are 4
monolayers thick and are
separated by 20 monolayers
of Si. The two upper valence
bands result from tunnelling
splitting of the Ge confined
heavy hole band. Similary
the second two upper bands
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