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2770 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 8, AUGUST 2011 Transduction of High-Frequency Micromechanical
 

Summary: 2770 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58, NO. 8, AUGUST 2011
Transduction of High-Frequency Micromechanical
Resonators Using Depletion Forces in p-n Diodes
Eugene Hwang, Student Member, IEEE, and Sunil A. Bhave, Senior Member, IEEE
Abstract--We present in this paper the design and fabrication
of a homogeneous silicon micromechanical resonator actuated
using forces acting on the immobile charge in the depletion region
of a symmetrically doped p-n diode. The proposed resonator
combines the high quality factor Q of air-gap-transduced res-
onators with the frequency-scaling benefits of internal dielec-
trically transduced resonators. Using this transduction method,
we demonstrate a thickness-longitudinal-mode micromechanical
resonator with Q 18000 at a resonant frequency of 3.72 GHz at
room temperature, yielding an f Q product of 6.69 1013
Hz,
which is the highest reported value for a silicon micromechanical
resonator to date.
Index Terms--Micromechanical resonators, p-n diode, quality
factor (Q), radio-frequency microelectromechanical systems (RF
MEMS).

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering