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Journal of Crystal Growth 240 (2002) 613 Calculated strain energy of hexagonal epitaxial thin films
 

Summary: Journal of Crystal Growth 240 (2002) 613
Calculated strain energy of hexagonal epitaxial thin films
Jianyun Shena,b,
*, Steven Johnstona
, Shunli Shangb
, Timothy Andersona
a
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611-6005, USA
b
Research Institute for Non-ferrous Metals of Beijing, 100088 Beijing, China
Received 21 June 2001; accepted 21 November 2001
Communicated by C.R. Abernathy
Abstract
Generalized formulae for the strain energy of hexagonal thin films on both hexagonal and rhombohedral substrates
have been developed. These formulae require knowledge of the elastic stiffness coefficients and the lattice parameters of
the film and only the lattice parameters of the substrate. Example calculations of the strain energy present in the
strained film-substrate material combinations GaN/Al2O3 and GaN/LiGaO2 are presented for different film
crystallographic directions and rotation with respect to the substrate. Finally, phase equilibrium calculations are
performed for the GaN binary system which show the substantial influence of strain energy on equilibrium in the
system. r 2002 Elsevier Science B.V. All rights reserved.

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science