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Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona
 

Summary: Atomic layer deposition of GaN using GaCl3 and NH3
Oh Hyun Kim, Dojun Kim, and Tim Andersona
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005
Received 20 October 2008; accepted 2 March 2009; published 30 June 2009
GaN films were grown on Si 100 substrate by atomic layer deposition ALD using GaCl3 and
NH3. Growth conditions were identified for which the growth rate exhibited a plateau at
2.0 Å/cycle, consistent with self-limiting adsorption. A relatively wide temperature window
500­750 °C for ALD growth mode was also established for one flow sequence schedule. In this
limit, both the 0002 and 101¯1 orientations of GaN were evident, which was attributed to the
competition between vertical and lateral growths. Cl incorporation was detected by x-ray
photoelectron spectroscopy for samples prepared with long GaCl3 exposure time. It is postulated
that gas phase formation of ClGaNH n with n=1­3 Kovács, Inorg. Chem. 41, 3067 2002
results in higher Cl content. © 2009 American Vacuum Society. DOI: 10.1116/1.3106619
I. INTRODUCTION
Group III nitrides have found wide application in both
electronic and optoelectronic devices. In particular, solid so-
lutions of the direct band-gap nitrides can access the entire
visible range of the spectrum as well as the near UV. Fur-
thermore, the relatively high thermal stability of GaN and
AlN has made these nitrides useful in power electronics.

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science