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366 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 3, MARCH 2002 InGaAs-Based High-Performance p-i-n Photodiodes
 

Summary: 366 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 3, MARCH 2002
InGaAs-Based High-Performance p-i-n Photodiodes
Ibrahim Kimukin, Student Member, IEEE, Necmi Biyikli, Student Member, IEEE,
Bayram Butun, Student Member, IEEE, Orhan Aytur, Member, IEEE, Selim M. Ünlü, Senior Member, IEEE, and
Ekmel Ozbay, Member, IEEE
Abstract--In this letter, we have designed, fabricated, and
characterized high-speed and high-efficiency InGaAs-based p-i-n
photodetectors with a resonant cavity enhanced structure. The
devices were fabricated by a microwave-compatible process. By
using a postprocess recess etch, we tuned the resonance wavelength
from 1605 to 1558 nm while keeping the peak efficiencies above
60%. The maximum quantum efficiency was 66% at 1572 nm
which was in good agreement with our theoretical calculations.
The photodiode had a linear response up to 6-mW optical power,
where we obtained 5-mA photocurrent at 3-V reverse bias. The
photodetector had a temporal response of 16 ps at 7-V bias. After
system response deconvolution, the 3-dB bandwidth of the device
was 31 GHz, which corresponds to a bandwidth-efficiency product
of 20 GHz.
Index Terms--Bandwidth-efficiency, high speed, p-i-n photo-

  

Source: Aytur, Orhan - Department of Electrical Engineering, Bilkent University
Goldberg, Bennett - Department of Physics, Boston University
Ozbay, Ekmel - Department of Electrical and Rlectronics Engineering & Physics, Bilkent University

 

Collections: Engineering; Materials Science; Physics