Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Defect and Diffusion Forum, Vol. 206-207 (2002) 87-102 N and p-type doping of cubic GaN
 

Summary: Defect and Diffusion Forum, Vol. 206-207 (2002) 87-102
87
N and p-type doping of cubic GaN
D.J. As
University of Paderborn, FB-6 Physics, Warburger Strasse 100, D-33095 Paderborn, Germany
Keywords: cubic GaN, MBE, doping, Si, Mg and C.
Abstract. N-type doping with Si and p-type doping with Mg and C of cubic GaN (c-GaN) epilayers
are reported. The cubic GaN films were grown by rf-plasma assisted molecular beam epitaxy
(MBE) on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental
Mg and Si were evaporated from thermal effusions cells whereas C-doping of c-GaN was achieved
by e-beam evaporation off a graphite rod. Secondary ion mass spectroscopy (SIMS), low
temperature photoluminescence (PL) and temperature dependent Hall-effect measurements were
used to study the incorporation and the optical and electrical properties. Si-doped c-GaN epilayers
were n-type with electron concentrations up to 5x1019
cm-3
and the incorporation of Si followed
exactly the vapor pressure curve of Si. Successful p-type doping was achieved with both Mg and C
at room temperature with maximum hole concentrations of about 2x1016
cm-3
and 6x1017

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics