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Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells
 

Summary: Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN
quantum wells
J. Schörmann,a
S. Potthast, D. J. As, and K. Lischka
Department of Physics, University of Paderborn, Warburger Strasse 100, D-33095 Paderborn, Germany
Received 21 June 2006; accepted 7 August 2006; published online 26 September 2006
In this contribution the authors studied the optical properties of cubic AlxGa1-xN/GaN single and
multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by
rf-plasma assisted molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth
of Al0.15Ga0.85N/GaN quantum wells clear reflection high energy electron diffraction oscillations
were observed indicating a two dimensional growth mode. They observe strong room temperature,
ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak
energy of the emission versus well width is reproduced by a square-well Poisson-Schrödinger model
calculation. © 2006 American Institute of Physics. DOI: 10.1063/1.2357587
Group III-nitrides crystallize in the stable wurtzite struc-
ture or in the metastable zinc blende structure. State-of-the-
art hexagonal group III-nitrides are grown along the polar
c axis, which produce strong internal electric fields. These
"build-in" polarization-induced electric fields limit the per-
formance of optoelectronic devices which employ quantum

  

Source: As, Donat Josef - Department Physik, Universität Paderborn
Shahriar, Selim - Department of Electrical and Computer Engineering, Northwestern University

 

Collections: Engineering; Materials Science; Physics