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to be published in Proc. MRS Fall Meeting, Symp U, "Stability of Thin Films and Nanostructures", Boston, MA, November 29-December 3, 2004.
 

Summary: to be published in Proc. MRS Fall Meeting, Symp U, "Stability of Thin Films and Nanostructures", Boston, MA,
November 29-December 3, 2004.
Thermal Grooving in Single versus Multilayer Thin Films
Peter M. Anderson, Jue Wang, Sridhar Narayanaswamy*
Dept of Materials Science and Engineering, Ohio State University, 2041 College Rd., Columbus,
OH 43210; *Rockwell Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
ABSTRACT
A 2D analytic result is presented for the penetration distance P of grain boundary grooves
formed during heating and straining of polycrystalline multilayer thin films with immiscible
phases. These grooves can ultimately cause pinch-off of individual layers. The result shows that
P ~ (time)0.25 initially and that P ~ time at longer time. This new analysis contrasts single layer
versus multilayer thin film response.
INTRODUCTION
Grain boundary (GB) grooving is driven by a tendency to reduce system grain boundary
energy and it serves as an important mechanism for morphological breakdown of multilayer thin
films at elevated temperature. For example, g-Ni(Al)/g'-Ni3Al multilayer thin films with bilayer
period L = 40 nm to 240 nm have been observed to break down via thermal grooving along grain
boundaries after exposure to T > 800 C [1, 2]. In contrast, annealed Cu/Nb multilayers with L =
150 nm groove in a stable manner, forming a series of triple junctions that balance Cu/Ni
interfacial energies with either Cu/Cu or Ni/Ni grain boundary energies [3]. Mullins [4] provides

  

Source: Anderson, Peter M. - Department of Materials Science and Engineering, Ohio State University

 

Collections: Materials Science