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Journal of Electron Spectroscopy and Related Phenomena 144147 (2005) 913916 Studies of the coupling of final d*-states in mixed Hf and Ti oxides
 

Summary: Journal of Electron Spectroscopy and Related Phenomena 144147 (2005) 913916
Studies of the coupling of final d*-states in mixed Hf and Ti oxides
(HfO2)x(TiOx)1-x and other complex oxides
C.C. Fulton, G. Lucovsky, Y. Zhang, Y. Zou, R.J. Nemanich, H. Ade, J.L. Whitten
North Carolina State University, Raleigh, NC 27695-8202, USA
Available online 3 March 2005
Abstract
X-ray absorption spectroscopy and vacuum ultra-violet spectroscopic ellipsometry are used to study the electronic structure of complex
oxides comprised of mixed TM/TM and TM/RE oxides. Experimental spectra for HfTiO4 and Gd(Dy)ScO3 indicate multiple d-state features
in the O K1 edge. These are compared with the empirical models for atomic d-state mixing. It is concluded that a mean field, virtual alloy
model does not apply, and that the effects associated with the differences in atomic coordination and deviations from ideal octahedral or
cubic bonding play a determinant role in d-state atom mixing. The results are applied band edge engineering options for high-k dielectric
applications.
2005 Published by Elsevier B.V.
Keywords: Complex oxides; X-ray absorption spectra; Spectroscopic ellipsometry; d-State coupling; Band gap engineering
1. Introduction
There has been an increasing interest in stoichiometric
complex oxides as high-k dielectrics for scaled Si CMOS.
In contrast to the TM and RE silicates and aluminates, these
oxides are binary alloys between TM and RE oxides, or two

  

Source: Ade, Harald W.- Department of Physics, North Carolina State University

 

Collections: Physics