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The following appeared in Appl. Phys. Lett. 69, 2297 (1996) Addendum: "Ion beam synthesis and stability of GaAs nanocrystals in silicon" [Appl.
 

Summary: The following appeared in Appl. Phys. Lett. 69, 2297 (1996)
Addendum: "Ion beam synthesis and stability of GaAs nanocrystals in silicon" [Appl.
Phys. Lett. 68, 2389 (1996)]
C.W. White, J.D. Budai, J.G. Zhu, and S.P. Withrow
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6057
M.J. Aziz
Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138
[S0003-6951(96)04341-0]
In a recent letter,1 we reported the synthesis of GaAs nanocrystals in silicon by ion
beam synthesis, and we presented a thermodynamic argument to account for their
formation. When we prepared this letter, we were not aware of previous works by others
reported in Refs. 2-4 which showed that GaAs (and GaP) could be produced in silicon by
high-dose ion implantation, and these should have been referenced in our letter. We regret
the omission of these references, and we thank the authors of Refs. 3 and 4 for bringing
this to our attention. In addition, TiN has been produced in silicon by high-dose ion
implantation,5 and this should have been referenced in our letter also. We thank the
authors of Ref. 5 for bringing this to our attention.
1C.W. White, J.D. Budai, J.G. Zhu, S.P. Withrow, and M.J. Aziz, Appl. Phys. Lett. 68,
2389 (1996).
2P. Madakson, E. Ganin, and J. Karasinski, J. Appl. Phys. 67, 4053 (1990).

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science