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Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
 

Summary: Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission
spectroscopy and first-principles calculations
P. D. C. King, T. D. Veal, and C. F. McConville*
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
F. Fuchs, J. Furthmüller, and F. Bechstedt
Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany
J. Schörmann, D. J. As, and K. Lischka
Department Physik, Universität Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany
Hai Lu
and W. J. Schaff
Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
Received 17 January 2008; published 26 March 2008
The valence band density of states VB-DOS of zinc-blende InN 001 is investigated using a combination
of high-resolution x-ray photoemission spectroscopy and quasiparticle corrected density functional theory. The
zinc-blende VB-DOS can be characterized by three main regions: a plateau region after the initial rise in the
DOS, followed by a shoulder on this region and a second narrow but intense peak, similar to other III-V and
II-VI semiconductor compounds. Good general agreement was observed between the experimental and theo-
retical results. Tentative evidence for an s-d coupling due to the interaction between valence-like N 2s states
and semicore-like In 4d states is also identified. Measurements and calculations for wurtzite InN 112¯0 are
shown to yield a VB-DOS similar to that of zinc-blende InN, although the nonzero crystal field and different

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics