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Electromigration of Intergranular Voids in Metal Films for
 

Summary: Electromigration of Intergranular
Voids in Metal Films for
Microelectronic Interconnects
Amir Averbuch1 Moshe Israeli2
Igor Ravve3
1 School of Computer Science
Tel Aviv University
Tel Aviv 69978, Israel
2 Faculty of Computer Science
Technion, Haifa 32000, Israel
3 Computing Science Department
Lawrence Berkeley Lab
University of California
December 2, 2002
Corresponding author:
Tel: 972-3-642-2020, Fax: 972-3-640-9357, E-mail:amir@math.tau.ac.il
Abstract
Voids and cracks often occur in the interconnect lines of microelec-
tronic devices. They increase the resistance of the circuits and may
even lead to a fatal failure. Voids may occur inside a single grain,

  

Source: Averbuch, Amir - School of Computer Science, Tel Aviv University

 

Collections: Computer Technologies and Information Sciences