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Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si,,001...
 

Summary: Nonlinear amplitude evolution during spontaneous patterning
of ion-bombarded Si,,001...
Jonah Erlebacher and Michael J. Aziza)
Harvard University, Division of Engineering and Applied Sciences, Cambridge, Massachusetts
Eric Chason, Michael B. Sinclair, and Jerrold A. Floro
Sandia National Laboratories, Albuquerque, New Mexico
Received 26 February 1999; accepted 10 September 1999
The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar sputtered
Si 001 surfaces was examined using a recently developed in situ spectroscopic technique. At
sufficiently long times, we find that the amplitude does not continue to grow exponentially as
predicted by the standard Bradley­Harper sputter rippling model. In accounting for this
discrepancy, we rule out effects related to the concentration of mobile species, high surface
curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all
wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is
reduced to approximately 25 nm. This observation suggests that a short circuit relaxation
mechanism limits amplitude growth. A strategy for influencing the ultimate ripple amplitude is
discussed. © 2000 American Vacuum Society. S0734-2101 00 01001-0
I. INTRODUCTION
Spontaneous formation of rippled patterns on surfaces un-
dergoing low-energy ion bombardment 500­1000 eV is

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science