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Electromigration drift velocity in Cu interconnects modeled with the level set method
 

Summary: Electromigration drift velocity in Cu interconnects modeled
with the level set method
M. Nathana)
and E. Glickman
Department of Electrical Engineering-Physical Electronics, Tel Aviv University, Ramat Aviv,
Tel Aviv 69978, Israel
M. Khenner and A. Averbuch
Department of Computer Science, Tel Aviv University, Ramat Aviv, Tel Aviv 69978, Israel
M. Israeli
Technion, Faculty of Computer Science, Haifa 32000, Israel
Received 21 July 2000; accepted for publication 29 September 2000
Electromigration EM drift velocity DV experiments in polycrystalline pure Cu lines are
simulated numerically with the level set method. The simulation is based on a grain boundary GB
grooving model, incorporating an electric field. The model is distinguished by two key requirements
imposed at the triple point where two surfaces and a GB meet: that of GB and surface flux coupling
flux continuity , and that of permanent equilibrium between surface and GB tensions. Surface
diffusion exists only at the advancing cathode edge, and is driven both by local curvature gradients
and by the local field. Using independent, literature diffusivity values, the simulation yields both the
DV prefactor and the EM activation energy in an Arrhenius-type expression. An excellent match is
obtained with experimental DV values in the T range of 573723 K. Some implications regarding

  

Source: Averbuch, Amir - School of Computer Science, Tel Aviv University
Khenner, Mikhail - Department of Mathematics, Western Kentucky University

 

Collections: Computer Technologies and Information Sciences; Mathematics