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Low interface trapped charge density in MBE in situ grown Si cubic GaN MIS structures
 

Summary: Low interface trapped charge density in MBE in situ grown Si
3
N
4
cubic GaN MIS structures
This article has been downloaded from IOPscience. Please scroll down to see the full text article.
2012 Semicond. Sci. Technol. 27 035020
(http://iopscience.iop.org/0268-1242/27/3/035020)
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IOP PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol. 27 (2012) 035020 (7pp) doi:10.1088/0268-1242/27/3/035020
Low interface trapped charge density in
MBE in situ grown Si3N4 cubic GaN MIS
structures
A Zado1,3, J Gerlach2 and D J As1

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics