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Dislocation Absorption in an Asymmetric Tilt Boundary J. Askin, P. Anderson

Summary: Dislocation Absorption in an Asymmetric Tilt Boundary
J. Askin, P. Anderson
Ohio State University, Columbus, Ohio, USA
R. Hoagland
Los Alamos National Lab, Los Alamos, New Mexico, USA
Keywords: Dislocation, Grain boundary, Modeling, Nanomaterials, Aluminum
Atomistic modeling of a perfect dislocation in the vicinity of a !11 <110> {545}/{181}
asymmetric tilt boundary in aluminum shows that grain boundary-dislocation interactions depend
strongly on where the incoming slip plane intersects the boundary and can be quite interesting.
Examples are shown ranging from full absorption to partial absorption and partial creation to full
stand-off for the same boundary. An important feature is how the dislocation character and sense
interacts with the local elastic moduli in the boundary. Full or partial absorption and even stand-
off cases can change grain boundary structure via long-range stress fields and resulting
rearrangements within the boundary.
Dislocation-grain boundary interactions are fundamental to low temperature plasticity
across a wide range of length scales. Grain boundaries (GB) can act as sources, barriers, and
sinks for dislocations and in grains in the range of <100 nm, grain boundaries are the primary
source of dislocations, as grain interiors are observed to be largely dislocation-free [1]. For


Source: Anderson, Peter M. - Department of Materials Science and Engineering, Ohio State University


Collections: Materials Science