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SELF-ASSEMBLING TUNNEL JUNCTIONS (SATJ)1 Junction formed at contact point between two long, fine metallic wires
 

Summary: SELF-ASSEMBLING TUNNEL JUNCTIONS (SATJ)1
Junction formed at contact point between two long, fine metallic wires
Tunnel barrier consists of inert gas film (Ar, He, Ne ....)
Preparation of Junctions
Surfaces of wires cleaned by Ohmic heating to 950 K for one hour in ambient
vacuum with walls of chamber held at 4K
Inert and dopant gas mixture deposited onto wires via heated capillary
Tunnel junction is formed by pressing wires a and b together with Lorentz
force generated by ambient magnetic field * and current Id
in curved wire
Desired resistance obtained by adjusting applied force (Fig. 2)
Tunneling current, I, conductance, = (dI/dV), and (d/dV) measured si-
multaneously using current pre-amplifier and AC modulation technique.
MOTIVATION
INTENSITY STUDIES OF INELASTIC ELECTRON TUNNELING SPECTRA
GLENN AGNOLETa
, DARIN T. ZIMMERMANb
a
Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA
b

  

Source: Agnolet, Glenn - Department of Physics and Astronomy, Texas A&M University

 

Collections: Physics