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Summary: SELF-ASSEMBLING TUNNEL JUNCTIONS (SATJ)1
Junction formed at contact point between two long, fine metallic wires
Tunnel barrier consists of inert gas film (Ar, He, Ne ....)
Preparation of Junctions
· Surfaces of wires cleaned by Ohmic heating to 950 K for one hour in ambient
vacuum with walls of chamber held at 4K
· Inert and dopant gas mixture deposited onto wires via heated capillary
· Tunnel junction is formed by pressing wires a and b together with Lorentz
force generated by ambient magnetic field * and current Id
in curved wire
· Desired resistance obtained by adjusting applied force (Fig. 2)
· Tunneling current, I, conductance, = (dI/dV), and (d/dV) measured si-
multaneously using current pre-amplifier and AC modulation technique.
MOTIVATION
INTENSITY STUDIES OF INELASTIC ELECTRON TUNNELING SPECTRA
GLENN AGNOLETa
, DARIN T. ZIMMERMANb
a
Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA
b
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