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Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting
 

Summary: Formation of single crystal sulfur supersaturated silicon based junctions
by pulsed laser melting
Malek Tabbal,a
Taegon Kim, Jeffrey M. Warrender,b
and Michael J. Aziz
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138
B. L. Cardozo and R. S. Goldman
Department of Materials Science and Engineering, University of Michigan, Ann Arbor,
Michigan 48109-2136
Received 26 June 2007; accepted 18 September 2007; published 18 October 2007
The authors demonstrate the formation of pn and nn+
junctions based on silicon supersaturated with
sulfur up to 0.46 at. % using a combination of ion implantation and pulsed laser melting. Silicon
wafers were implanted at 200 keV 32
S+
to doses ranging from 1 1015
to 1 1016
ions/cm2
and
subsequently melted and resolidified by using a homogenized excimer laser pulse. Above a

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science