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Analytical model for ArF photoresist shrinkage under scanning electron microscopy inspection
 

Summary: Analytical model for ArF photoresist shrinkage under scanning electron
microscopy inspection
Guy Ayal and David Andelmana
Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv,
Tel Aviv 69978, Israel
Yachin Cohen
Wolfson Department of Chemical Engineering, Technion-Israel Institute of Technology, Technion City,
Haifa 32000, Israel
Received 4 September 2008; accepted 8 June 2009; published 28 July 2009
Linewidth slimming is a phenomenon occurring specifically in photolithography of 193 nm
wavelength ArF radiation. Photoresists for this wavelength appear to lose volume when exposed
to electron-beam radiation, as when scanned in scanning electron microscopy for critical dimension
linewidth measurement. This work is an attempt to understand this "shrinkage" from a polymer
physics point of view. More specifically, the authors try to check the applicability of free volume
theory in polymer systems by calculating some relevant physical properties, assuming that the
exposure to e-beam creates an external hardened shell for the material bulk, and continued exposure
will deliver heat into the polymer enclosed in a confined space. The authors' main conclusion is that
the free volume loss annealing shows qualitative resemblance to experiment, but this effect
exclusively is not a sufficient quantitative explanation for the observed shrinkage. A possible
explanation for this discrepancy is that their model is limited due to unknown material parameters,

  

Source: Andelman, David - School of Physics and Astronomy, Tel Aviv University

 

Collections: Materials Science; Physics