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Ferroelastic domains in bilayered ferroelectric thin films R. Mahjoub,1
 

Summary: Ferroelastic domains in bilayered ferroelectric thin films
R. Mahjoub,1
V. Anbusathaiah,1
S. P. Alpay,2,a
and V. Nagarajan1,b
1
School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales
2052, Australia
2
Materials Science and Engineering Program and Institute of Material Science, University of Connecticut,
Connecticut 06269, USA
Received 8 September 2008; accepted 31 October 2008; published online 17 December 2008
We investigate theoretically ferroelastic domain fractions in a heteroepitaxial bilayer consisting of
001 tetragonal PbZrxTi1-xO3 and 001 rhombohedral PbZr1-xTixO3 on a thick 001 passive
substrate as a function of the lattice misfit strain between layers and the substrate. By considering
the self-strain in each layer and the indirect elastic interaction between the layers, we provide a
numerical analysis of the relative domain fractions in the tetragonal layer of a
001 PbZr0.2Ti0.8O3/ 001 PbZr0.8Ti0.2O3 and 001 PbZr0.4Ti0.6O3/ 001 PbZr0.6Ti0.4O3 bilayer
structure as a function of the tetragonal layer thickness on 001 LaAlO3, 001 SrTiO3, and 001
MgO. It is found that the elastic coupling between the tetragonal and rhombohedral layers leads to

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science