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Near-infrared intersubband absorption in nonpolar cubic GaN/AlN superlattices
 

Summary: Near-infrared intersubband absorption in nonpolar cubic GaN/AlN
superlattices
E. A. DeCuir, Jr., E. Fred, and M. O. Manasreha
Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701
and Department of Physics, University of Arkansas, Fayetteville, Arkansas 7270
J. Schörmann, D. J. As, and K. Lischka
Department of Physics, University of Paderborn, Paderborn 33095 Germany
Received 19 June 2007; accepted 3 July 2007; published online 27 July 2007
Optical absorption spectra related to intersubband transitions in molecular beam epitaxially grown
nonpolar cubic-GaN/AlN superlattices were observed in the spectral range of 1.5­2.00 m. The
background doping was measured using an electrochemical capacitance-voltage technique and
found to be on the order of 1018
cm-3
. This doping level yields a Fermi energy level slightly above
the ground state energy level enabling intersubband transitions to occur. The existence of the
intersubband transition is verified in several samples with different well widths. The observed peak
position energy of the intersubband transition is compared to those calculated using a transfer matrix
method. © 2007 American Institute of Physics. DOI: 10.1063/1.2764557
In recent years, progress in hexagonal III-nitride epitax-
ial growth has extended the applications of this material sys-

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics