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Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen

Summary: Minority carrier transport properties of GaInNAs heterojunction bipolar
transistors with 2% nitrogen
Rebecca J. Welty,a)
Huoping Xin, Charles W. Tu, and Peter M. Asbeck
University of California at San Diego, La Jolla, California 92037-0407
Received 10 June 2003; accepted 15 October 2003
GaAs-based heterojunction bipolar transistors HBTs have a relatively large turn-on voltage of
approximately 1.4 V that can only be decreased by reducing the band-gap energy of the base
material. For a variety of applications, particularly operation with low power supply voltage and
reduced power dissipation, it would be desirable to have a smaller value of turn-on voltage. We
report the performance of NpN double heterojunction bipolar transistors fabricated on a GaAs
substrate with a Ga0.89In0.11N0.02As0.98 base that has a band-gap energy (Eg) of 0.98 eV; this is
achieved with a nitrogen composition of 2%. These devices have a turn-on voltage VBE that is 0.4
V lower than that of their GaAs-base counterparts. The peak incremental current gain HFE is 8. The
current gain of nitrogen containing HBTs is degraded due to the complex change in transport
properties of carriers through the GaInNAs base region. In this article, the transport properties of
GaInNAs-base HBTs are investigated by temperature-dependent dc current­voltage characteristics,
optical and high frequency small-signal electrical measurements. The characterization of these
devices is important to understand the effect of nitrogen on the device performance. © 2004
American Institute of Physics. DOI: 10.1063/1.1631075


Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego


Collections: Engineering