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A silicon nanocrystals based memory Sandip Tiwari,a)

Summary: A silicon nanocrystals based memory
Sandip Tiwari,a)
Farhan Rana, Hussein Hanafi, Allan Hartstein, Emmanuel F. Crabbe´,
and Kevin Chan
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Received 13 September 1995; accepted for publication 2 December 1995
A new memory structure using threshold shifting from charge stored in nanocrystals of silicon
( 5nm in size is described. The devices utilize direct tunneling and storage of electrons in the
nanocrystals. The limited size and capacitance of the nanocrystals limit the numbers of stored
electrons. Coulomb blockade effects may be important in these structures but are not necessary for
their operation. The threshold shifts of 0.2­0.4 V with read and write times less than 100's of a
nanosecond at operating voltages below 2.5 V have been obtained experimentally. The retention
times are measured in days and weeks, and the structures have been operated in an excess of 109
cycles without degradation in performance. This nanomemory exhibits characteristics necessary for
high density and low power. © 1996 American Institute of Physics. S0003-6951 96 00310-0
The use of multiple confinement of free carriers has led
to several significant observations of physical phenomena
and demonstrations of usefulness in electronic and optoelec-
tronic devices. The observations include consequences of
one dimension of freedom in field-effect transistors1,2


Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University


Collections: Engineering