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Low Power 8T SRAM Using 32nm Independent Gate FinFET Young Bok Kim
 

Summary: Low Power 8T SRAM Using 32nm Independent Gate FinFET
Technology
Young Bok Kim
Dept. of Electrical and
Computer Engineering
Northeastern University
Boston, MA, USA
youngbok@ece.neu.edu
Yong-Bin Kim
Dept. of Electrical and
Computer Engineering
Northeastern University
Boston, MA, USA
ybk@ece.neu.edu
Fabrizio Lombardi
Dept. of Electrical and
Computer Engineering
Northeastern University
Boston, MA, USA
lombardi@ece.neu.edu

  

Source: Ayers, Joseph - Marine Science Center & Department of Biology, Northeastern University

 

Collections: Engineering