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The HARPSS Process for Fabrication of Nano-Precision Silicon Electromechanical Resonators
 

Summary: The HARPSS Process for Fabrication of Nano-Precision Silicon
Electromechanical Resonators
Seong Yoel No and Farrokh Ayazi
Microelectronics Research Center
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, GA 30332-0250
Email: ayazi@ece.gatech.edu, Tel: (404) 894-9496, Fax: (404) 894-4700
Abstract
In this paper, Radio Frequency (RF) Ultra-Stiff
electromechanical resonators are introduced and
compared with their Ultra-Light counterparts. RF
ultra-stiff resonators with dimensions in the low end of
the micrometer scale can yield UHF frequencies (0.3-
3GHz) by operating at their higher order flexural
modes. However, electrostatic actuation and capacitive
sensing of ultra-stiff resonators will require nanoscale
airgaps. The HARPSS fabrication process presented in
this paper is an all-silicon process that is capable of
producing capacitive silicon resonators (poly and
single-crystalline) with lateral gap spacing as small as

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering