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Europium doping of zincblende GaN by ion implantation K. Lorenz,1,2,a
 

Summary: Europium doping of zincblende GaN by ion implantation
K. Lorenz,1,2,a
I. S. Roqan,3
N. Franco,1,2
K. P. O'Donnell,3
V. Darakchieva,1,2
E. Alves,1,2
C. Trager-Cowan,3
R. W. Martin,3
D. J. As,4
and M. Panfilova4
1
Instituto Tecnolůgico e Nuclear, EN10, 2686-953 Sacavem, Portugal
2
CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
3
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
4
Department of Physics, University of Paderborn, 33098 Paderborn, Germany
Received 11 March 2009; accepted 24 April 2009; published online 2 June 2009

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics