Summary: Progress In Electromagnetics Research, PIER 97, 343­356, 2009
EMPIRICAL FORMULATION OF BRIDGE INDUC-
TANCE IN INDUCTIVELY TUNED RF MEMS SHUNT
SWITCHES
K. Topalli, M. Unlu, H. I. Atasoy, S. Demir, O. A. Civi
and T. Akin
Department of Electrical and Electronics Engineering
Middle East Technical University
Ankara, Turkey
Abstract--This paper presents a substrate independent empirical
formulation for the bridge inductance of inductively tuned RF MEMS
shunt switches, allowing a systematic design approach to tune their
isolation bands. Inductive tuning of RF MEMS switches is achieved
by inserting recesses in the ground plane and meanders to the bridges,
allowing the tuning of the isolation band of the switch from the X-band
to the mm-wave band. The bridge inductance is first extracted from
parametric EM simulations of the RF MEMS shunt switches and then
fitted to the proposed formulations using empirical coefficients. The
accuracy of the formulations is verified with the measurements on the
switches that are fabricated using an in-house surface micromachining

Source: Akin, Tayfun - Department of Electrical and Electronics Engineering, Middle East Technical University

Collections: Engineering