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Published: April 22, 2011 r 2011 American Chemical Society 6250 dx.doi.org/10.1021/jp111658w |J. Phys. Chem. A 2011, 115, 62506259
 

Summary: Published: April 22, 2011
r 2011 American Chemical Society 6250 dx.doi.org/10.1021/jp111658w |J. Phys. Chem. A 2011, 115, 62506259
ARTICLE
pubs.acs.org/JPCA
Selective Ablation of Xe from Silicon Surfaces: Molecular Dynamics
Simulations and Experimental Laser Patterning
Ori Stein,
Zhibin Lin,
Leonid V. Zhigilei,
and Micha Asscher*,

Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel

Renewable Energy Materials Research Science and Engineering Center Department of Physics, Colorado School of Mines, Golden,
Colorado 80401, United States

Department of Materials Science & Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
1. INTRODUCTION
The abrupt ejection of a thin molecular or atomic layer
adjacent to an absorbing substrate rapidly heated by short pulse

  

Source: Asscher, Micha - Institute of Chemistry, Hebrew University of Jerusalem
Zhigilei, Leonid V. - Department of Materials Science and Engineering, University of Virginia

 

Collections: Chemistry; Materials Science