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Temperature dependence of the dielectric response of BaZrO3 by immittance spectroscopy
 

Summary: Temperature dependence of the dielectric response
of BaZrO3 by immittance spectroscopy
Abdul-Majeed Azada,*
, Selvarajan Subramaniamb,1
a
Advanced Materials Research Center, SIRIM Berhad, 1 Persiaran Dato' Menteri,
Section 2, 40911 Shah Alam, Selangor, Malaysia
b
Ceramics Technology Center, SIRIM Berhad, 1 Persiaran Dato' Menteri,
Section 2, 40911 Shah Alam, Selangor, Malaysia
(Refereed)
Received 19 July 2001; received in revised form 21 September 2001; accepted 1 October 2001
Abstract
Electrical measurements using AC immittance spectroscopic technique over the temperature
range of 253008C, on sintered compacts of pure BaZrO3 and those containing 5 wt.%
BaSnO3 sintered in the temperature range of 160017008C for up to 12 h are reported. Data
analyses revealed that the capacitance and the derived dielectric constant remained invariant
over more than three decades of frequency in the kilo to megahertz regime. Typically, the
average dielectric constant was 15 and the TCK values were P3 and P186 ppm/8C for pure and
5 wt.% BaSnO3-added BaZrO3, respectively, in the range 253008C. # 2002 Elsevier

  

Source: Azad, Abdul-Majeed - Department of Chemical and Environmental Engineering, University of Toledo

 

Collections: Materials Science; Energy Storage, Conversion and Utilization