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INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS Int. J. Numer. Model. 2003; 16:161174 (DOI: 10.1002/jnm.491)
 

Summary: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS
Int. J. Numer. Model. 2003; 16:161174 (DOI: 10.1002/jnm.491)
Time-domain simulation of the full hydrodynamic model
Andreas Aste1,n,y
and R.uudiger Vahldieck2
1
Institute for Theoretical Physics, Klingelbergstrasse 82, 4054 Basel, Switzerland
2
Laboratory for Electromagnetic Fields and Microwave Electronics, Gloriastrasse 35, 8092 Z.uurich, Switzerland
SUMMARY
A simple upwind discretization of the highly coupled non-linear differential equations which define the
hydrodynamic model for semiconductors is given in full detail. The hydrodynamic model is able to describe
inertia effects which play an increasing role in different fields of opto- and microelectronics. A silicon
n
n n
-structure is simulated, using the energy-balance model and the full hydrodynamic model.
Results for stationary cases are then compared, and it is pointed out where the energy-balance model,
which is implemented in most of today's commercial semiconductor device simulators, fails to describe
accurately the electron dynamics. Additionally, a GaAs n
n n

  

Source: Aste, Andreas - Institut fr Physik, Universitt Basel

 

Collections: Physics