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Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
 

Summary: Fabrication and subband gap optical properties of silicon supersaturated
with chalcogens by ion implantation and pulsed laser melting
Brion P. Bob,1
Atsushi Kohno,1,2
Supakit Charnvanichborikarn,3
Jeffrey M. Warrender,4,a
Ikurou Umezu,1,5
Malek Tabbal,6
James S. Williams,3
and Michael J. Aziz1,b
1
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
2
Department of Applied Physics, Fukuoka University, Fukuoka 814-0180, Japan
3
Research School of Physics and Engineering, Australian National University, Canberra City ACT 2601,
Australia
4
Benet Laboratories, U.S. Army ARDEC, Watervliet, New York 12189, USA
5

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science