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*Corresponding author. Tel.: #1 619 5343014; fax: #1 619 5342486; e-mail: yhsin@sigma.ucsd.edu.
 

Summary: *Corresponding author. Tel.: #1 619 5343014; fax: #1 619
5342486; e-mail: yhsin@sigma.ucsd.edu.
Journal of Crystal Growth 188 (1998) 355--358
AlGaAs/GaAs HBTs with extrinsic base regrowth
Y.M. Hsin*, N.Y. Li, C.W. Tu, P.M. Asbeck
Department of Electrical and Computer Engineering, University of California at San Diego, 9500 Gilman Drive,
La Jolla, CA 92093-0407, USA
Abstract
N--p--n abrupt AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with a 500 A> -thick GaAs base, and regrown
thick extrinsic base layers of p> AlGaAs/GaAs have been fabricated. The regrown extrinsic base layers allow easy contact
to the base with low base resistance to achieve high f

. f

was improved by a factor of &2 with regrown base
compared to conventional processing, up to a value of 45 GHz in these non-self-aligned devices. The extrinsic base
regrowth was done at 500C by MOMBE, which employed low-temperature in situ etch using tris-dimethylaminoarsenic
to remove residual oxide from the surface before regrowth. 1998 Published by Elsevier Science B.V. All rights
reserved.
PACS: 81.15.Hi; 85.30.Pg; 73.61.Ey

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering