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Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum , K. Lischka1
 

Summary: Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum
wells
S.F. Li1
, D.J. As1
, K. Lischka1
, D.G. Pacheco-Salazar2
, L.M.R. Scolfaro2
, J.R. Leite2,*
,
F. Cerdeira3
, E.A. Meneses3
;
1
University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn,
Germany;
2
Institute of Physics, University of Sao Paulo, P.O. Box 66318, Sao Paulo-SP, Brazil;
3
Institute of Physics Gleb Wataghin, University of Campinas,
P.O. Box 6165, Campinas-SP, Brazil

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics