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A 27 MHZ TEMPERATURE COMPENSATED MEMS OSCILLATOR WITH SUB-PPM INSTABILITY
 

Summary: A 27 MHZ TEMPERATURE COMPENSATED MEMS OSCILLATOR
WITH SUB-PPM INSTABILITY
Roozbeh Tabrizian, Mauricio Pardo and Farrokh Ayazi
Georgia Institute of Technology, Atlanta, Georgia, USA
ABSTRACT
This paper reports on the design, implementation and
characterization of a low phase-noise 27 MHz MEMS
oscillator with sub-ppm temperature instability based on a
high-Q composite bulk acoustic wave (BAW) resonator.
An array of silicon dioxide (SiO2) pillars has been
uniformly embedded in the body of a piezoelectrically
transduced silicon resonator to compensate its negative
temperature coefficient of frequency (TCF). Using this
technique, an overall frequency drift of 83 ppm is
achieved for the resonator over the temperature range of
20C to 100C while resonator Q remains greater than
7,500 in atmospheric pressure. An electronically
compensated oscillator using this resonator exhibits
sub-ppm temperature instability with a consistent phase
noise (PN) behavior over the entire temperature range and

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering